FDFM2N111

Part NumberFDFM2N111

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 20V 4A 3X3 MLP

DatasheetFDFM2N111

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 4A (Ta) 1.7W (Ta) Surface Mount MicroFET 3x3mm

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FDFM2N111 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDFM2N111

Standard Package

3000

Manufacturer

ON Semiconductor

Series

PowerTrench®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

273pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MicroFET 3x3mm

Package / Case

6-WDFN Exposed Pad

All categories

FDFM2N111

Part NumberFDFM2N111

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 20V 4A 3X3 MLP

DatasheetFDFM2N111

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 4A (Ta) 1.7W (Ta) Surface Mount MicroFET 3x3mm

FDFM2N111 - Product Attributes

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