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FDFMA2P859T


FDFMA2P859T

Part NumberFDFMA2P859T

Manufacturer

Description

Datasheet

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FDFMA2P859T - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
SeriesPowerTrench®
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds435pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicroFET 2x2 Thin
Package / Case6-UDFN Exposed Pad

FDFMA2P859T - Tags

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