FDI150N10
FDI150N10
Part Number FDI150N10 Description MOSFET N-CH 100V 57A I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 57A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)
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FDI150N10 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDI150N10 Standard Package 800 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 57A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16mOhm @ 49A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4760pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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