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FDMS3669S

FDMS3669S

Part NumberFDMS3669S

ManufacturerON Semiconductor

DescriptionMOSFET 2N-CH 30V 13A/18A PWR56

DatasheetFDMS3669S

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56

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FDMS3669S - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	FDMS3669S
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	13A, 18A
Rds On (Max) @ Id, Vgs	10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1605pF @ 15V
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	Power56

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