FDMS3669S
FDMS3669S
Part Number FDMS3669S
Description MOSFET 2N-CH 30V 13A/18A PWR56
Package / Case 8-PowerTDFN
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
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FDMS3669S - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet FDMS3669S
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A, 18A
Rds On (Max) @ Id, Vgs 10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 15V
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package Power56
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