FDN302P
FDN302P
Part Number FDN302P Description MOSFET P-CH 20V 2.4A SSOT3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
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FDN302P - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDN302P Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 55mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 882pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3
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IRFR5505TRPBF Infineon Technologies, P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pak, HEXFET®
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IRF9Z34PBF Vishay Siliconix, P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB,
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NTLUS3A90PZTAG ON Semiconductor, P-Channel 20V 2.6A (Ta) 600mW (Ta) Surface Mount 6-UDFN (1.6x1.6), µCool™
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DMP210DUFB4-7 Diodes Incorporated, P-Channel 20V 200mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3,
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DMP3056LDM-7 Diodes Incorporated, P-Channel 30V 4.3A (Ta) 1.25W (Ta) Surface Mount SOT-26,
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IRF9Z34STRRPBF Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,
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RQ5E035ATTCL Rohm Semiconductor, P-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TSMT3,
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PMV65XP,215 Nexperia USA Inc., P-Channel 20V 2.8A (Ta) 480mW (Ta) Surface Mount TO-236AB,
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PMV160UP,215 Nexperia USA Inc., P-Channel 20V 1.2A (Ta) 335mW (Ta), 2.17W (Tc) Surface Mount TO-236AB,
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DMG2307L-7 Diodes Incorporated, P-Channel 30V 2.5A (Ta) 760mW (Ta) Surface Mount SOT-23,
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