FDN342P
FDN342P
Part Number FDN342P Description MOSFET P-CH 20V 2A SSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
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FDN342P - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDN342P Standard Package 3000 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 635pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3
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RS3E075ATTB Rohm Semiconductor, P-Channel 30V 2W (Ta) Surface Mount 8-SOP,
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SI4427BDY-T1-GE3 Vishay Siliconix, P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
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