FDP027N08B-F102

Part NumberFDP027N08B-F102

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 80V 120A TO-220-3

DatasheetFDP027N08B_F102

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3

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FDP027N08B-F102 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDP027N08B_F102

Standard Package

800

Manufacturer

ON Semiconductor

Series

PowerTrench®

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

178nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13530pF @ 40V

FET Feature

Power Dissipation (Max)

246W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case