FDP10AN06A0

Part NumberFDP10AN06A0

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 75A TO-220AB

DatasheetFDB10AN06A0, FDP10AN06A0

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 12A (Ta), 75A (Tc) 135W (Tc) Through Hole TO-220-3

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FDP10AN06A0 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDB10AN06A0, FDP10AN06A0

Standard Package

400

Manufacturer

ON Semiconductor

Series

PowerTrench®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1840pF @ 25V

FET Feature

Power Dissipation (Max)

135W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case