FDP10N60NZ
FDP10N60NZ
Part Number FDP10N60NZ Description MOSFET N-CH 600V 10A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 10A (Tc) 185W (Tc) Through Hole TO-220-3
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FDP10N60NZ - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDP(F)10N60NZ Standard Package 1000 Manufacturer ON Semiconductor Series UniFET-II™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1475pF @ 25V FET Feature - Power Dissipation (Max) 185W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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