FDP4D5N10C

Part NumberFDP4D5N10C

ManufacturerON Semiconductor

DescriptionFET ENGR DEV-NOT REL

DatasheetFDP4D5N10C, FDPF4D5N10C

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 128A (Tc) 2.4W (Ta), 150W (Tc) Through Hole TO-220-3

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FDP4D5N10C - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDP4D5N10C, FDPF4D5N10C

Standard Package

800

Manufacturer

ON Semiconductor

Series

PowerTrench®

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

128A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 310µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5065pF @ 50V

FET Feature

Power Dissipation (Max)

2.4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case