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FDP61N20

FDP61N20

Part NumberFDP61N20

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 61A TO-220

DatasheetFDP61N20

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3

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FDP61N20 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDP61N20
Standard Package	800
Manufacturer	ON Semiconductor
Series	UniFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	41mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3380pF @ 25V
FET Feature	-
Power Dissipation (Max)	417W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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