FDS6162N3

Part NumberFDS6162N3

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 20V 21A 8-SOIC

DatasheetFDS6162N3

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO

To learn about the specification of FDS6162N3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDS6162N3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDS6162N3.
We are offering FDS6162N3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

FDS6162N3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDS6162N3

Standard Package

Manufacturer

ON Semiconductor

Series

PowerTrench®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 21A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

73nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

5521pF @ 10V

FET Feature

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

All categories

FDS6162N3

Part NumberFDS6162N3

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 20V 21A 8-SOIC

DatasheetFDS6162N3

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO

FDS6162N3 - Product Attributes

FDS6162N3 - Tags