FDS6575
FDS6575
Part Number FDS6575
Description MOSFET P-CH 20V 10A 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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FDS6575 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDS6575
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 4951pF @ 10V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
DMP2021UFDE-7
Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),
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AO4421
Alpha & Omega Semiconductor Inc., P-Channel 60V 6.2A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
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Diodes Incorporated, P-Channel 250V 260mA (Ta) 600mW (Ta) Surface Mount U-DFN2020-6 (Type E),
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FDC634P
ON Semiconductor, P-Channel 20V 3.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
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TP0604N3-G
Microchip Technology, P-Channel 40V 430mA (Tj) 740mW (Ta) Through Hole TO-92-3,
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IRF9388TRPBF
Infineon Technologies, P-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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SI2321-TP
Micro Commercial Co, P-Channel 20V 2.9A (Ta) 350mW (Ta) Surface Mount SOT-23,
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DMP2088LCP3-7
Diodes Incorporated, P-Channel 20V 2.9A (Ta) 1.13W Surface Mount X2-DSN1006-3,
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SI7137DP-T1-GE3
Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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