FDS86140

Part NumberFDS86140

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDS86140
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	11.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	9.8mOhm @ 11.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2580pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

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SIHH21N65EF-T1-GE3	Vishay Siliconix, N-Channel 650V 19.8A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8,	View
IRFP3206PBF	Infineon Technologies, N-Channel 60V 120A (Tc) 280W (Tc) Through Hole TO-247AC, HEXFET®	View
IPS70R900P7SAKMA1	Infineon Technologies, N-Channel 700V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
SQS482EN-T1_GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
BSC014N04LSIATMA1	Infineon Technologies, N-Channel 40V 31A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8 FL, OptiMOS™	View
BUK7210-55B,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
TPH8R80ANH,L1Q	Toshiba Semiconductor and Storage, N-Channel 100V 32A (Tc) 1.6W (Ta), 61W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
SIA466EDJ-T1-GE3	Vishay Siliconix, N-Channel 20V 25A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View

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