FDS86267P

Part NumberFDS86267P

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 150V

DatasheetFDS86267P

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC

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FDS86267P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDS86267P

Standard Package

Manufacturer

ON Semiconductor

Series

PowerTrench®

Packaging

Cut Tape (CT)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

255mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1130pF @ 75V

FET Feature

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

All categories

FDS86267P

Part NumberFDS86267P

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 150V

DatasheetFDS86267P

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC

FDS86267P - Product Attributes

FDS86267P - Tags