FDZ191P
FDZ191P
Part Number FDZ191P
Description MOSFET P-CH 20V 3A 6WLCSP
Package / Case 6-UFBGA, WLCSP
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 3A (Ta) 1.9W (Ta) Surface Mount 6-WLCSP (1.0x1.5)
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FDZ191P - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDZ191P
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WLCSP (1.0x1.5)
Package / Case 6-UFBGA, WLCSP
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SI2325DS-T1-E3
Vishay Siliconix, P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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SI3417DV-T1-GE3
Vishay Siliconix, P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®
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