Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	FGA50N100BNTD
Standard Package	450
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	NPT and Trench
Voltage - Collector Emitter Breakdown (Max)	1000V
Current - Collector (Ic) (Max)	50A
Current - Collector Pulsed (Icm)	100A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Power - Max	156W
Switching Energy	-
Input Type	Standard
Gate Charge	275nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	1.5µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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RGTVX6TS65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 144A 404W Through Hole TO-247N,	View
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RGTH60TK65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 28A 61W Through Hole TO-3PFM,	View
FGY75T120SQDN	ON Semiconductor, IGBT Field Stop 1200V 150A 790W Through Hole TO-247-3,	View
STGB30H60DFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK,	View
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APT95GR65B2	Microsemi Corporation, IGBT NPT 650V 208A 892W Through Hole T-MAX™ [B2],	View
IXYT25N250CHV	IXYS, IGBT 2500V 95A 937W Surface Mount TO-268HV (IXYT), XPT™	View
HGTG30N60B3D	ON Semiconductor, IGBT 600V 60A 208W Through Hole TO-247-3,	View
IXBK75N170	IXYS, IGBT 1700V 200A 1040W Through Hole TO-264, BIMOSFET™	View
IXBH32N300	IXYS, IGBT 3000V 80A 400W Through Hole TO-247AD (IXBH), BIMOSFET™	View

FGA50N100BNTDTU

Part NumberFGA50N100BNTDTU