FJNS3212RBU


FJNS3212RBU

Part NumberFJNS3212RBU

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 Short Body

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FJNS3212RBU - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package10000
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)40V
Resistor - Base (R1)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max300mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Short Body
Supplier Device PackageTO-92S

FJNS3212RBU - Tags

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