FJP2160DTU

Part NumberFJP2160DTU

ManufacturerON Semiconductor

DescriptionTRANS NPN 800V 2A TO-220

DatasheetFJP2160D

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 800V 2A 5MHz 100W Through Hole TO-220-3

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FJP2160DTU - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

FJP2160D

Standard Package

1000

Manufacturer

ON Semiconductor

Series

ESBC™

Packaging

Tube

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

800V

Vce Saturation (Max) @ Ib, Ic

750mV @ 330mA, 1A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 400mA, 3V

Power - Max

100W

Frequency - Transition

5MHz

Operating Temperature

-55°C ~ 125°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package