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FQA10N80C-F109

FQA10N80C-F109

Part NumberFQA10N80C-F109

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 10A TO-3P

DatasheetFQA10N80C-F109

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 10A (Tc) 240W (Tc) Through Hole TO-3P

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FQA10N80C-F109 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQA10N80C-F109
Standard Package	450
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 25V
FET Feature	-
Power Dissipation (Max)	240W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3

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