FQA6N80

Part NumberFQA6N80

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 6.3A TO-3P

DatasheetFQA6N80

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 6.3A (Tc) 185W (Tc) Through Hole TO-3P

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FQA6N80 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQA6N80

Standard Package

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

6.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.95Ohm @ 3.15A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

Power Dissipation (Max)

185W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

All categories

FQA6N80

Part NumberFQA6N80

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 6.3A TO-3P

DatasheetFQA6N80

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 6.3A (Tc) 185W (Tc) Through Hole TO-3P

FQA6N80 - Product Attributes

FQA6N80 - Tags