FQAF10N80

Part NumberFQAF10N80

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 6.7A TO-3PF

DatasheetFQAF10N80

Package / CaseTO-3P-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF

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FQAF10N80 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQAF10N80

Standard Package

360

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 3.35A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

Power Dissipation (Max)

113W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

All categories

FQAF10N80

Part NumberFQAF10N80

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 6.7A TO-3PF

DatasheetFQAF10N80

Package / CaseTO-3P-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF

FQAF10N80 - Product Attributes

FQAF10N80 - Tags