FQAF16N50
FQAF16N50
Part Number FQAF16N50 Description MOSFET N-CH 500V 11.3A TO-3PF Package / Case TO-3P-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 11.3A (Tc) 110W (Tc) Through Hole TO-3PF
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FQAF16N50 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQAF16N50 Standard Package 360 Manufacturer ON Semiconductor Series QFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 5.65A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack
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