FQAF19N60

Part NumberFQAF19N60

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 11.2A TO-3PF

DatasheetFQAF19N60

Package / CaseTO-3P-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 11.2A (Tc) 120W (Tc) Through Hole TO-3PF

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FQAF19N60 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQAF19N60

Standard Package

360

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

All categories

FQAF19N60

Part NumberFQAF19N60

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 11.2A TO-3PF

DatasheetFQAF19N60

Package / CaseTO-3P-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 11.2A (Tc) 120W (Tc) Through Hole TO-3PF

FQAF19N60 - Product Attributes

FQAF19N60 - Tags