FQAF6N80

Part NumberFQAF6N80

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 4.4A TO-3PF

DatasheetFQAF6N80

Package / CaseTO-3P-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4.4A (Tc) 90W (Tc) Through Hole TO-3PF

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FQAF6N80 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQAF6N80

Standard Package

360

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.95Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

All categories

FQAF6N80

Part NumberFQAF6N80

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 4.4A TO-3PF

DatasheetFQAF6N80

Package / CaseTO-3P-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4.4A (Tc) 90W (Tc) Through Hole TO-3PF

FQAF6N80 - Product Attributes

FQAF6N80 - Tags