FQB1N60TM

Part NumberFQB1N60TM

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 1.2A D2PAK

DatasheetFQB1N60, FQI1N60

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 1.2A (Tc) 3.13W (Ta), 40W (Tc) Surface Mount D²PAK (TO-263AB)

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FQB1N60TM - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQB1N60, FQI1N60

Standard Package

800

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11.5Ohm @ 600mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 25V

FET Feature

Power Dissipation (Max)

3.13W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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