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FQB55N10TM

FQB55N10TM

Part NumberFQB55N10TM

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 55A D2PAK

DatasheetFQB55N10

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 55A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)

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FQB55N10TM - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQB55N10
Standard Package	1
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	26mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	98nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	2730pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.75W (Ta), 155W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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