FQB630TM

Part NumberFQB630TM

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 9A D2PAK

DatasheetFQB630, FQI630

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 9A (Tc) 3.13W (Ta), 78W (Tc) Surface Mount D²PAK (TO-263AB)

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FQB630TM - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQB630, FQI630

Standard Package

800

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 25V

FET Feature

Power Dissipation (Max)

3.13W (Ta), 78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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