FQE10N20CTU

Part NumberFQE10N20CTU

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 4A TO-126

DatasheetFQE10N20C

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 4A (Tc) 12.8W (Tc) Through Hole TO-126-3

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FQE10N20CTU - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQE10N20C

Standard Package

1920

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

FET Feature

Power Dissipation (Max)

12.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-126-3

Package / Case

TO-225AA, TO-126-3

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