FQI10N60CTU

Part NumberFQI10N60CTU

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 9.5A I2PAK

DatasheetFQB10N60C, FQI10N60C

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 9.5A (Tc) 3.13W (Ta), 156W (Tc) Through Hole I2PAK (TO-262)

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FQI10N60CTU - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQB10N60C, FQI10N60C

Standard Package

1000

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

730mOhm @ 4.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 25V

FET Feature

Power Dissipation (Max)

3.13W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

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