FQI3N30TU

Part NumberFQI3N30TU

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 300V 3.2A I2PAK

DatasheetFQB3N30, FQI3N30

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 300V 3.2A (Tc) 3.13W (Ta), 55W (Tc) Through Hole I2PAK (TO-262)

To learn about the specification of FQI3N30TU, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQI3N30TU with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQI3N30TU.
We are offering FQI3N30TU for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

FQI3N30TU - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQB3N30, FQI3N30

Standard Package

1000

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

3.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 1.6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 25V

FET Feature

Power Dissipation (Max)

3.13W (Ta), 55W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

All categories