FQI4N20LTU

Part NumberFQI4N20LTU

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 3.8A I2PAK

DatasheetFQB,FQI4N20L

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Through Hole I2PAK (TO-262)

To learn about the specification of FQI4N20LTU, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQI4N20LTU with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQI4N20LTU.
We are offering FQI4N20LTU for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

FQI4N20LTU - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQB,FQI4N20L

Standard Package

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

1.35Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 25V

FET Feature

Power Dissipation (Max)

3.13W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

All categories