FQN1N50CBU

Part NumberFQN1N50CBU

ManufacturerON Semiconductor

To learn about the specification of FQN1N50CBU, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQN1N50CBU with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQN1N50CBU.
We are offering FQN1N50CBU for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	1000
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	380mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.4nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 25V
FET Feature	-
Power Dissipation (Max)	890mW (Ta), 2.08W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)