FQP1N60

Part NumberFQP1N60

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 1.2A TO-220

DatasheetFQP1N60

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 1.2A (Tc) 40W (Tc) Through Hole TO-220-3

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FQP1N60 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQP1N60

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11.5Ohm @ 600mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 25V

FET Feature

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

All categories

FQP1N60

Part NumberFQP1N60

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 1.2A TO-220

DatasheetFQP1N60

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 1.2A (Tc) 40W (Tc) Through Hole TO-220-3

FQP1N60 - Product Attributes

FQP1N60 - Tags