FQP4N80
FQP4N80
Part Number FQP4N80 Description MOSFET N-CH 800V 3.9A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 3.9A (Tc) 130W (Tc) Through Hole TO-220-3
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FQP4N80 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQP4N80 Standard Package 1000 Manufacturer ON Semiconductor Series QFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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