FQP55N06

Part NumberFQP55N06

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 55A TO-220

DatasheetFQP55N06

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 55A (Tc) 133W (Tc) Through Hole TO-220-3

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FQP55N06 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQP55N06

Standard Package

1000

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 27.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1690pF @ 25V

FET Feature

Power Dissipation (Max)

133W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

All categories

FQP55N06

Part NumberFQP55N06

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 55A TO-220

DatasheetFQP55N06

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 55A (Tc) 133W (Tc) Through Hole TO-220-3

FQP55N06 - Product Attributes

FQP55N06 - Tags