FQP6N60

Part NumberFQP6N60

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 6.2A TO-220

DatasheetFQP6N60

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 6.2A (Tc) 130W (Tc) Through Hole TO-220-3

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FQP6N60 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQP6N60

Standard Package

1000

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 3.1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 25V

FET Feature

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

All categories

FQP6N60

Part NumberFQP6N60

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 6.2A TO-220

DatasheetFQP6N60

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 6.2A (Tc) 130W (Tc) Through Hole TO-220-3

FQP6N60 - Product Attributes

FQP6N60 - Tags