FQP6N80

Part NumberFQP6N80

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 5.8A TO-220

DatasheetFQP6N80

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 5.8A (Tc) 158W (Tc) Through Hole TO-220-3

To learn about the specification of FQP6N80, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQP6N80 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQP6N80.
We are offering FQP6N80 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

FQP6N80 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQP6N80

Standard Package

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.95Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

All categories

FQP6N80

Part NumberFQP6N80

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 5.8A TO-220

DatasheetFQP6N80

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 5.8A (Tc) 158W (Tc) Through Hole TO-220-3

FQP6N80 - Product Attributes

FQP6N80 - Tags