FQPF19N10

Part NumberFQPF19N10

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 13.6A TO-220F

DatasheetFQPF19N10

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 13.6A (Tc) 38W (Tc) Through Hole TO-220F

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FQPF19N10 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQPF19N10

Standard Package

1000

Manufacturer

ON Semiconductor

Series

QFET®

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

780pF @ 25V

FET Feature

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

All categories

FQPF19N10

Part NumberFQPF19N10

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 13.6A TO-220F

DatasheetFQPF19N10

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 13.6A (Tc) 38W (Tc) Through Hole TO-220F

FQPF19N10 - Product Attributes

FQPF19N10 - Tags