FQU1N60CTU
FQU1N60CTU
Part Number FQU1N60CTU Description MOSFET N-CH 600V 1A IPAK Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
To learn about the specification of FQU1N60CTU, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQU1N60CTU with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQU1N60CTU.
We are offering FQU1N60CTU for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FQU1N60CTU - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQD1N60C, FQU1N60C Standard Package 5040 Manufacturer ON Semiconductor Series QFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA
FQU1N60CTU - Related ProductsMore >>
PSMN8R5-100ESQ Nexperia USA Inc., N-Channel 100V 100A (Tj) 263W (Tc) Through Hole I2PAK,
View
IRFS11N50ATRRP Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D2PAK,
View
SI7386DP-T1-E3 Vishay Siliconix, N-Channel 30V 12A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
NX138AKR Nexperia USA Inc., N-Channel 60V 190mA (Ta) 325mW (Ta) Surface Mount TO-236AB,
View
IRFIZ34NPBF Infineon Technologies, N-Channel 55V 21A (Tc) 37W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
View
IRFI614GPBF Vishay Siliconix, N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3,
View
SSM3K72CTC,L3F Toshiba Semiconductor and Storage, N-Channel 60V 150mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII-H
View
IRLL024NTRPBF Infineon Technologies, N-Channel 55V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
SI4840BDY-T1-E3 Vishay Siliconix, N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
R6018JNJGTL Rohm Semiconductor, N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS (D2PAK),
View
SFT1445-TL-H ON Semiconductor, N-Channel 100V 17A (Ta) 1W (Ta), 35W (Tc) Surface Mount TP-FA,
View
SIRA12DP-T1-GE3 Vishay Siliconix, N-Channel 30V 25A (Tc) 4.5W (Ta), 31W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FQU1N60CTU - Tags
English
