GA100JT12-227

Part NumberGA100JT12-227

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 1200V 160A SOT227

DatasheetGA100JT12-227

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionTRANS SJT 1200V 160A SOT227

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GA100JT12-227 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GA100JT12-227

Standard Package

Manufacturer

GeneSiC Semiconductor

Series

Packaging

Tube

Part Status

Obsolete

FET Type

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

10mOhm @ 100A

Vgs(th) (Max) @ Id

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

14400pF @ 800V

FET Feature

Power Dissipation (Max)

535W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

All categories

GA100JT12-227

Part NumberGA100JT12-227

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 1200V 160A SOT227

DatasheetGA100JT12-227

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionTRANS SJT 1200V 160A SOT227

GA100JT12-227 - Product Attributes

GA100JT12-227 - Tags