GA10SICP12-263

Part NumberGA10SICP12-263

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 1200V 25A TO263-7

DatasheetGA10SICP12-263

Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description1200V 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead)

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GA10SICP12-263 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GA10SICP12-263

Standard Package

Manufacturer

GeneSiC Semiconductor

Series

Packaging

Tube

Part Status

Active

FET Type

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

100mOhm @ 10A

Vgs(th) (Max) @ Id

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

1403pF @ 800V

FET Feature

Power Dissipation (Max)

170W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

All categories

GA10SICP12-263

Part NumberGA10SICP12-263

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 1200V 25A TO263-7

DatasheetGA10SICP12-263

Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description1200V 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead)

GA10SICP12-263 - Product Attributes

GA10SICP12-263 - Tags