GA50JT06-258

Part NumberGA50JT06-258

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 600V 100A

DatasheetGA50JT06-258

Package / CaseTO-258-3, TO-258AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description600V 100A (Tc) 769W (Tc) Through Hole TO-258

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GA50JT06-258 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GA50JT06-258

Standard Package

Manufacturer

GeneSiC Semiconductor

Series

Packaging

Bulk

Part Status

Active

FET Type

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

25mOhm @ 50A

Vgs(th) (Max) @ Id

Vgs (Max)

FET Feature

Power Dissipation (Max)

769W (Tc)

Operating Temperature

-55°C ~ 225°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-258

Package / Case

TO-258-3, TO-258AA

All categories

GA50JT06-258

Part NumberGA50JT06-258

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 600V 100A

DatasheetGA50JT06-258

Package / CaseTO-258-3, TO-258AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description600V 100A (Tc) 769W (Tc) Through Hole TO-258

GA50JT06-258 - Product Attributes

GA50JT06-258 - Tags