Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	SiC, MPS Product Selector Guide
Standard Package	30
Manufacturer	GeneSiC Semiconductor
Series	-
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	50A (DC)
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Package / Case	TO-247-2
Supplier Device Package	TO-247-2
Operating Temperature - Junction	175°C (Max)

GB01SLT12-214	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 1200V 2.5A Surface Mount SMB (DO-214AA),	View
GC20MPS12-247	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 1200V 90A (DC) Through Hole TO-247-2,	View
GAP3SLT33-214	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 3300V 300mA (DC) Surface Mount DO-214AA,	View
GC08MPS12-252	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 1200V 40A (DC) Surface Mount TO-252-2,	View
GB01SLT12-214	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 1200V 2.5A Surface Mount SMB (DO-214AA),	View
GC05MPS12-220	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 1200V 29A (DC) Through Hole TO-220-2,	View
GB01SLT06-214	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 650V 1A (DC) Surface Mount DO-214AA,	View
GB02SHT01-46	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 100V 4A (DC) Through Hole TO-46,	View
GC50MPS06-247	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 650V 50A (DC) Through Hole TO-247-2,	View
GB05MPS33-263	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 3300V 14A (DC) Surface Mount TO-263-7,	View
GB01SLT12-252	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 1200V 1A Surface Mount TO-252,	View
GC20MPS12-220	GeneSiC Semiconductor, Diode Silicon Carbide Schottky 1200V 94A (DC) Through Hole TO-220-2,	View

GC50MPS06-247

Part NumberGC50MPS06-247