GP2M007A080F

Part NumberGP2M007A080F

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 800V 7A TO220F

DatasheetGP2M007A080F

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 7A (Tc) 50W (Tc) Through Hole TO-220F

To learn about the specification of GP2M007A080F, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add GP2M007A080F with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of GP2M007A080F.
We are offering GP2M007A080F for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

GP2M007A080F - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GP2M007A080F

Standard Package

Manufacturer

Global Power Technologies Group

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.9Ohm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1410pF @ 25V

FET Feature

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

All categories

GP2M007A080F

Part NumberGP2M007A080F

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 800V 7A TO220F

DatasheetGP2M007A080F

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 7A (Tc) 50W (Tc) Through Hole TO-220F

GP2M007A080F - Product Attributes

GP2M007A080F - Tags