GT10J312(Q)

Part NumberGT10J312(Q)

ManufacturerToshiba Semiconductor and Storage

DescriptionIGBT 600V 10A 60W TO220SM

DatasheetGT10J312

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT 600V 10A 60W Surface Mount TO-220SM

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GT10J312(Q) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

GT10J312

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tube

Part Status

Obsolete

IGBT Type

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

20A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Power - Max

60W

Switching Energy

Input Type

Standard

Td (on/off) @ 25°C

400ns/400ns

Test Condition

300V, 10A, 100Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-220SM

Base Part Number

GT10

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