GT50J121(Q)

Part NumberGT50J121(Q)

ManufacturerToshiba Semiconductor and Storage

DescriptionIGBT 600V 50A 240W TO3P LH

DatasheetGT50J121

Package / CaseTO-3PL

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT 600V 50A 240W Through Hole TO-3P(LH)

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GT50J121(Q) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

GT50J121

Standard Package

100

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tube

Part Status

Obsolete

IGBT Type

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.45V @ 15V, 50A

Power - Max

240W

Switching Energy

1.3mJ (on), 1.34mJ (off)

Input Type

Standard

Td (on/off) @ 25°C

90ns/300ns

Test Condition

300V, 50A, 13Ohm, 15V

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3PL

Supplier Device Package

TO-3P(LH)

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