HAT2160H-EL-E


HAT2160H-EL-E

Part NumberHAT2160H-EL-E

Manufacturer

Description

Datasheet

Package / CaseSC-100, SOT-669

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HAT2160H-EL-E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerRenesas Electronics America
Series-
PackagingCut Tape (CT)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs54nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7750pF @ 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

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