HAT2210RWS-E

Part NumberHAT2210RWS-E

ManufacturerRenesas Electronics America

To learn about the specification of HAT2210RWS-E, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add HAT2210RWS-E with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of HAT2210RWS-E.
We are offering HAT2210RWS-E for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Standard Package	2500
Manufacturer	Renesas Electronics America
Series	-
Part Status	Last Time Buy
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta), 8A (Ta)
Rds On (Max) @ Id, Vgs	24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 10V, 1330pF @ 10V
Power - Max	1.5W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP