HGT1S12N60A4DS


HGT1S12N60A4DS

Part NumberHGT1S12N60A4DS

Manufacturer

Description

Datasheet

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HGT1S12N60A4DS - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package800
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusNot For New Designs
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)54A
Current - Collector Pulsed (Icm)96A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max167W
Switching Energy55µJ (on), 50µJ (off)
Input TypeStandard
Gate Charge78nC
Td (on/off) @ 25°C17ns/96ns
Test Condition390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)30ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Base Part NumberHGT1S12N60

HGT1S12N60A4DS - Tags

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